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| SI6969BDQ New Product Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ VGS = -4.5 V -12 0.040 @ VGS = -2.5 V 0.055 @ VGS = -1.8 V ID (A) -4.6 - 3.8 - 3.0 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 SI6969BDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -12 "8 - 4.6 Steady State Unit V -4.0 -3.2 -30 A -0.7 0.83 0.53 -55 to 150 W _C ID IDM IS PD TJ, Tstg -3.8 -1.0 1.14 0.73 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72017 S-22051--Rev. B, 18-Nov-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 88 120 65 Maximum 110 150 80 Unit _C/W C/W 1 SI6969BDQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 70_C VDS -8 V, VGS = -4.5 V VGS = -4.5 V, ID = -4.6 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -3.8 A VGS = -1.8 V, ID = -3.0 A Forward Transconductancea gfs VSD VDS = -8 V, ID = -4.6 A IS = -1.25 A, VGS = 0 V -30 0.024 0.031 0.044 18 -0.68 -1.1 0.030 0.040 0.055 S V W -0.45 -0.8 "100 -1 -25 V nA mA m A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.25 A, di/dt = 100 A/ms VDD = -6 V, RL = 6 W ID ^ -1.0 A, VGEN = -4.5 V, RG = 6 W VDS = -6 V, VGS = -4.5 V, ID = -4.6 A 16.5 2 4.7 20 35 110 90 100 40 60 180 150 200 ns 25 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2.5 V 24 2V I D - Drain Current (A) I D - Drain Current (A) 125_C 18 18 24 30 TC = -55_C 25_C Transfer Characteristics 12 1.5 V 6 12 6 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72017 S-22051--Rev. B, 18-Nov-02 2 SI6969BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 2500 Vishay Siliconix Capacitance C - Capacitance (pF) 0.08 2000 0.06 VGS = 1.8 V VGS = 2.5 V 1500 Ciss 0.04 1000 Coss 0.02 VGS = 4.5 V 500 Crss 0 0.00 0 6 12 18 24 30 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 4.6 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.6 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 8 12 16 20 1.2 2 1.0 1 0.8 0 0 4 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 0.06 ID = 4.6 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 6 7 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72017 S-22051--Rev. B, 18-Nov-02 www.vishay.com 3 SI6969BDQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 200 Single Pulse Power, Junction-to-Ambient 160 0.2 V GS(th) Variance (V) Power (W) ID = 250 mA 0.0 120 80 -0.2 40 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 1 ms 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 120_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 1 Square Wave Pulse Duration (sec) 10- 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72017 S-22051--Rev. B, 18-Nov-02 SI6969BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72017 S-22051--Rev. B, 18-Nov-02 www.vishay.com 5 |
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